Chain Feram
Trademark details
Chain Feram® is a registered trademark used for Ferroelectric Random Access Memory and owned by Kabushiki Kaisha Toshiba (Toshiba Corporation). Full trade mark registration details, registered images and more information below.
| Goods and/or Services: | Ferroelectric Random Access Memory |
| Serial Number: | 76178486 |
| Registration Number: | 2852347 |
| Filing Date: | Dec 11, 2000 |
|
Last Applicant(s)/ Owner(s) of Record | Kabushiki Kaisha Toshiba (Toshiba Corporation)72, Horikawa-Cho |
| Related Products: | Electrical and Scientific Apparatus |
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Low Power Ferroelectric Memories - FeRAM, FeFET, FeNAND
Contents | Purchase. A Memory Strategies Focus Report. Trends in Low Power Ferroelectric Memories, January 2012 (1T1C FeRAM, Plastic FeRAM, FeFET, FeNAND, Chain ...
FeRAM Technology : Today and Future
... E-mail iwao.kunishima@toshiba co.jp Introduction Ferroelectric random access memory (FeRAM ... Chain-FeRAM TM structure Figure 1 shows a schematic drawing of the 8Mb Chain ...
TOSHIBA DEVELOPS WORLD'S HIGHEST-BANDWIDTH, HIGHEST DENSITY NON ...
... announced the prototype of a new FeRAM -Ferroelectric Random Access Memory-that redefines ... line pitch and using chain ...
Toshiba rolls high-speed, 128-Mbit FeRAM - electrical engineering ...
... Corp. will describe a high-density, 128-megabit ferroelectric random access memory (FeRAM or FRAM). ... Previous chain architecture collected four data-lines but Toshiba has ...
