1t-Sram-M
Trademark details
1t-Sram-M® is a registered trademark used for Integrated Circuits and owned by Mosys, Inc., Monolithic System Technology, Inc.. Full trade mark registration details, registered images and more information below.
| Goods and/or Services: | Integrated Circuits |
| Serial Number: | 76233724 |
| Registration Number: | 2805332 |
| Filing Date: | Mar 30, 2001 |
|
Last Applicant(s)/ Owner(s) of Record | Mosys, Inc.755 N. Mathilda Avenue |
| Related Products: | Electrical and Scientific Apparatus |
Suppliers

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MoSys IncUSA in Sunnyvale, California, USA
...Memory Chips, High Speed Static Random Access Memory (SRAM), Low Power Static Random Access Memory (SRAM) available from MoSys, Inc. USA based in Sunnyvale, CA. Click the links below to visit our website or contact us via our profile page. Location...
Web Sites
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1T-SRAM - Wikipedia, the free encyclopedia
1T-SRAM-M Variant with lower standby power consumption, for applications such as cell phones. 1T-SRAM-R Incorporates ECC for lower soft error rates.
1T-SRAM-Q™: Quad-Density Technology Reins in Spiraling Memory ...
architecture, 1T-SRAM-M features unique leakage suppression circuitry that achieves standby current as low as 10µA/Mbit with full data retention.
1T-SRAM - Wikipedia
1t-sram-m スタンバイ時に消費電力がより少なくなる変更。携帯電話向けの用途が意図された。 1t-sram-r eccに対応し、 ...
EDSFair/Electronic Design and Solution Fair 2004
■1T-SRAM-R Transparent Error Correction(TEC)技術により面積に影響を与えずにソフトエラーレート(SER)を向上させる技術。 ■1T-SRAM-M ...
Web Sites

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In-Stat - Information Alert
...memories as well as MoSys' high-density, low-power 1T-SRAM-M memory technology. MoSys is addressing the requirements...processes while minimizing chip cost with our innovative 1T-SRAM-M and 6T-SRAM-R memory technologies, said Dr. Fu-Chieh...
News and Blogs

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MoSys, TSMC Develop Low-Power Embedded 1T-SRAM
...logic process. ,The first of the memory technologies is 1T-SRAM-M, which features low-power consumption, and is thus...and 0.15-micron standard logic processes. The new 1T-SRAM-M technology in the TSMC 0.13-micron geometry is scheduled...
MoSys, TSMC Develop Low-Power Embedded 1T-SRAM
...process. The first of the memory technologies is 1T-SRAM-M, which features low-power consumption, and is thus...and 0.15-micron standard logic processes. The new 1T-SRAM-M technology in the TSMC 0.13-micron geometry is scheduled...
MoSys :: Investors :: Press Room
...capabilities of MoSys' second-generation 1T-SRAM-M â ¢ (first announced...mobile applications. The first generation 1T-SRAM-M technology...2001). Now the second-generation 1T-SRAM-M technology challenges even...
